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| (R) STPS120M POWER SCHOTTKY RECTIFIERS MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 1A 20 V 150C 0.41 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY & EXTENDED BATTERY LIFE LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED s s s s s s A C ST Mite (DO-216AA) DESCRIPTION Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in ST Mite, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the package this device fits battery powered equipment (cellular, notebook, PDA's, printers) as well chargers and PCMCIA cards. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature* Critical rate of rise of reverse voltage (rated Vr, Tj = 25C) Tc = 140C tp = 1s = 0.5 tp = 8.3 ms sinusoidal Tj = 25C Parameter Repetitive peak reverse voltage Value 20 2 1 50 1400 - 65 to + 150 150 10000 Unit V A A A W C C V/s dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/5 July 2003 - Ed : 2A STPS120M THERMAL RESISTANCE Symbol Rth (j-c) Rth (j-a) Junction to case Junction to ambient with minimum recommended pad size, PC board FR4 Parameter Value 20 250 Unit C/W C/W STATIC ELECTRICAL CHARACTERISTICS Value Symbol IR * Parameter Reverse leakage current Tests conditions Min. Tj = 25C Tj = 100C Tj = 25C Tj = 100C Tj = 25C Tj = 100C VF * Forward voltage drop Tj = 25C Tj = 100C Tj = 25C Tj=100C Pulse test : * tp 380 s, 2% Unit Typ. 1.3 275 Max. 3.9 850 2.0 450 1.0 300 0.49 0.41 0.54 0.48 V A VR = VRRM VR = 10 V 0.6 145 VR = 5 V 0.4 105 IF = 1A 0.44 0.36 IF = 2 A 0.48 0.42 To evaluate the conduction losses use the following equation : P = 0.34 x IF(AV) + 0.07 IF2(RMS) 2/5 STPS120M Fig. 1: Conduction losses versus average current. Fig. 2: Average forward current versus ambient temperature ( = 0.5) IF(av)(A) 1.2 = 0.1 = 0.2 = 0.5 PF(av)(W) 0.6 1.1 1.0 = 0.05 =1 Rth(j-a)=Rth(j-c) 0.5 0.9 0.8 0.7 0.4 0.3 0.6 0.5 Rth(j-a)=270C/W 0.2 T 0.4 0.3 0.2 T 0.1 IF(av)(A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 =tp/T 1.0 1.1 tp 0.1 0.0 =tp/T 0 25 tp Tamb(C) 50 75 100 125 150 1.2 Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1s) 1 1.2 1 PARM(tp) PARM(25C) 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 0 10 100 1000 Tj(C) 0 25 50 75 100 125 150 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 22 20 18 16 14 12 10 Tc=75C Tc=25C Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 = 0.2 = 0.1 Single pulse = 0.5 8 6 Tc=125C 4 2 0 IM t 0.2 0.1 0.0 T =0.5 t(s) 1.E-02 1.E-01 1.E+00 tp(s) 1.E-03 1.E-02 =tp/T tp 1.E-03 1.E-04 1.E-01 3/5 STPS120M Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 1.E+01 Tj=150C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) 1000 F=1MHz Vosc=30mV Tj=25C 1.E+00 Tj=125C 1.E-01 Tj=100C 100 1.E-02 Tj=75C Tj=50C 1.E-03 Tj=25C VR(V) 10 VR(V) 14 16 18 20 1 10 100 1.E-04 0 2 4 6 8 10 12 Fig. 9-1: Forward voltage drop versus forward current (low level). IFM(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Tj=100C (Typical values) Tj=25C (Maximum values) Tj=100C (Maximum values) Fig. 9-2: Forward voltage drop versus forward current (high level) IFM(A) 100.0 10.0 Tj=100C (Maximum values) Tj=100C (Typical values) Tj=25C (Maximum values) 1.0 VFM(V) 0.1 0.0 0.2 0.4 VFM(V) 0.6 0.8 1.0 1.2 1.4 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35m). Rth(j-a)/(C/W) 300 250 200 150 100 50 S(cm) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 4/5 STPS120M PACKAGE MECHANICAL DATA ST Mite DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 0.85 1.00 1.15 0.033 0.039 0.045 A1 0.10 0.004 b 0.40 0.65 0.016 0.025 b2 0.70 1.00 0.027 0.039 c 0.10 0.25 0.004 0.010 D 1.75 1.90 2.05 0.069 0.075 0.081 E 1.75 1.90 2.05 0.069 0.075 0.081 H 3.60 3.75 3.90 0.142 0.148 0.154 L 0.50 0.63 0.80 0.047 0.025 0.031 L2 1.20 1.35 1.50 0.047 0.053 0.059 L3 0.50 ref (Typ.) 0.019 ref (Typ.) R 0.07 0.003 R1 0.07 0.003 L3 D b2 b H L2 L R E C A1 R1 0 to 6 A Note: The anode is connected to the longer tab The cathode is connected to the shorter tab (heatsink) FOOTPRINT (dimensions in mm) 2.67 0.762 2.54 1.27 0.635 Type STPS120M Marking 120 Package ST Mite Weight 15.5 mg Base qty 12000 Delivery mode Tape & reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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